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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHPM6B10N120/D
Hybrid Power Module
Integrated Power Stage for 460 VAC Motor Drives
These E-POWERTM modules integrate a 3-phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp motor drive applications. The inverter incorporates advanced insulated gate bipolar transistors (IGBT) matched with fast soft free-wheeling diodes to give optimum performance. The top connector pins are designed for easy interfacing to the user's control board. * Short Circuit Rated 10 s @ 125C, 720 V * Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) * Compact Package Outline * Access to Positive and Negative DC Bus Recognized * UL * Visit our website at http://www.mot-sps.com/tsg/ ORDERING INFORMATION
Device MHPM6B10N120SL MHPM6B15N120SL MHPM6B25N120SL MHPM6B10N120SS MHPM6B15N120SS MHPM6B25N120SS Current Rating 10 15 25 10 15 25 Package 464A-01 Style 1 464B-02 Style 1
MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
Motorola Preferred Devices
10, 15, 25 A, 1200 V HYBRID POWER MODULES
SL SUFFIX CASE 464A-02 Style 1
SS SUFFIX CASE 464B-03 Style 1
Symbol VCES VGES 10A120 15A120 25A120 10A120 15A120 25A120 10A120 15A120 25A120 10A120 15A120 25A120 10A120 15A120 25A120 10A120 15A120 25A120 10A120 15A120 25A120 ICmax Value 1200 20 10 15 25 20 30 50 10 15 25 8.3 11 14 20 30 50 41 50 65 16 22 27 Unit V V A
MAXIMUM DEVICE RATINGS (TJ = 25C unless otherwise noted)
Rating IGBT Reverse Voltage Gate-Emitter Voltage Continuous IGBT Collector Current (TC = 80C)
Repetitive Peak IGBT Collector Current (1)
IC(pk)
A
Continuous Diode Current (TC = 25C)
IFmax
A
Continuous Diode Current (TC = 80C)
IF80
A
Repetitive Peak Diode Current (1)
IF(pk)
A
IGBT Power Dissipation per die (TC = 95C)
PD
W
Diode Power Dissipation per die (TC = 95C)
PD
W
(1) 1.0 ms = 1.0% duty cycle
Preferred devices are Motorola recommended choices for future use and best overall value.
E-POWER is a trademark of Motorola, Inc.
Motorola IGBT Device Data
(c) Motorola, Inc. 1998
1
MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
MAXIMUM DEVICE RATINGS (TJ = 25C unless otherwise noted)
Rating Junction Temperature Range Short Circuit Duration (VCE = 720 V, TJ = 125C) Isolation Voltage, Pin to Baseplate Operating Case Temperature Range Storage Temperature Range Mounting Torque -- Heat Sink Mounting Holes Symbol TJ tsc VISO TC Tstg -- Value - 40 to +150 10 2500 - 40 to +95 - 40 to +125 1.4 Unit C
ms
Vac C C Nm
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
DC AND SMALL SIGNAL CHARACTERISTICS
Gate-Emitter Leakage Current (VCE = 0 V, VGE = 20 V) Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V) Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) Collector-Emitter Saturation Voltage (IC = ICmax, VGE = 15 V) TJ = 125C Forward Transconductance 10A120 15A120 25A120 IGES ICES VGE(th) V(BR)CES VCE(SAT) gfe -- -- 5.0 1200 1.7 -- -- -- -- 1.7 -- -- -- -- -- -- -- -- 5.0 6.0 -- 2.35 2.69 8.3 14 19 2.35 1.9 1880 2620 4770 65 87 150 20 100 7.0 -- 2.9 -- -- -- -- 3.1 -- -- -- -- -- -- -- A A V V V mho
Diode Forward Voltage (IF = IFmax, VGE = 0 V) TJ = 125C Input Capacitance (VCE = 10 V, VGE = 0 V, f = 1.0 MHz) 10A120 15A120 25A120
VF Cies
V pF
Input Gate Charge (VCE = 600 V, IC = ICmax, VGE = 15 V)10A120 15A120 25A120
QT
nC
INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25C)
Recommended Gate Resistor (RG(on) = RG(off)) 10A120 15A120 25A120 Turn-On Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Rise Time (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Turn-Off Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Fall Time (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Turn-On Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Eon -- -- -- 1.5 2.7 4.6 1.8 3.3 5.6 td(off) -- -- -- tf -- -- -- 39 48 70 47 58 84 640 780 1060 -- -- -- td(on) -- -- -- tr -- -- -- 84 105 150 -- -- -- 174 240 330 -- -- -- RG -- -- -- 82 82 68 -- -- --
W
ns
ns
ns
ns
mJ
2
Motorola IGBT Device Data
MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
Characteristic Symbol Min Typ Max Unit
INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25C) - continued
Turn-Off Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 10A120 15A120 25A120 10A120 15A120 25A120 10A120 15A120 25A120 Eoff -- -- -- -- -- -- -- -- -- -- -- -- 1.1 1.7 3.0 95 110 124 8.0 9.7 11.5 550 600 740 1.4 2.1 3.5 -- -- -- -- -- -- -- -- -- mJ
Diode Reverse Recovery Time (IF = IFmax, V = 600 V)
trr
ns
Peak Reverse Recovery Current (IF = IFmax, V = 600 V)
Irrm
A
Diode Stored Charge (IF = IFmax, V = 600 V)
Qrr
nC
INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 125C)
Characteristic Turn-On Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Rise Time (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Turn-Off Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Fall Time (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Turn-On Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Turn-Off Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) 10A120 15A120 25A120 Diode Reverse Recovery Time (IF = IFmax, V = 600 V) 10A120 15A120 25A120 Peak Reverse Recovery Current (IF = IFmax, V = 600 V) 10A120 15A120 25A120 Diode Stored Charge (IF = IFmax, V = 600 V) 10A120 15A120 25A120 Qrr Irrm -- -- -- -- -- -- 11.0 14.1 17.4 995 1770 2460 -- -- -- -- -- -- nC trr -- -- -- 160 210 250 -- -- -- A Eoff -- -- -- 1.5 2.4 4.2 -- -- -- ns Eon -- -- -- 2.0 3.6 6.1 -- -- -- mJ td(off) -- -- -- tf -- -- -- 51 60 76 -- -- -- mJ 680 850 1140 -- -- -- ns Symbol td(on) -- -- -- tr -- -- -- 93 110 160 -- -- -- ns 160 220 310 -- -- -- ns Min Typ Max Unit ns
THERMAL CHARACTERISTICS (Each Die)
Thermal Resistance -- IGBT 10A120 15A120 25A120 10A120 15A120 25A120 RqJC -- -- -- -- -- -- 1.1 0.89 0.68 2.8 2.0 1.6 1.3 1.1 0.85 3.5 2.5 2.0 C/W
Thermal Resistance -- Diode
RqJC
C/W
Motorola IGBT Device Data
3
MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
TYPICAL CHARACTERISTICS
(see also application information) 2.0 TJ = 125C IF, FORWARD CURRENT (NORMALIZED: I F/I Fmax ) 1.5 25C 2.0 1.8 IC , COLLECTOR CURRENT (NORMALIZED: I C /I Cmax ) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VF, FORWARD VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 9.0 V TJ = 25C VGE = 18 V 15 V 12 V
1.0
0.5
0
Figure 1. Forward Characteristics -- Free-Wheeling Diode
Figure 2. Forward Characteristics, TJ = 25C
2.0 1.8 IC , COLLECTOR CURRENT (NORMALIZED: I C /I Cmax ) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 9.0 V 9.0 10 VGE = 18 V 15 V VGE, GATE-EMITTER VOLTAGE (VOLTS) 12 V TJ = 125C
16 14 10N120 12 10 8.0 6.0 4.0 2.0 0 0 20 40 60 80 100 120 140 160 Qg, TOTAL GATE CHARGE (nC) VCE = 400 V VCE = 500 V VCE = 600 V 15N120 25N120
Figure 3. Forward Characteristics, TJ = 125C
Figure 4. Gate-Emitter Voltage versus Total Gate Charge
10 t, TIME (NORMALIZED: TIME/t d(off)typ) TJ = 125C TJ = 25C td(off) 1.0 VCE = 600 V VGE = 15 V RG = RG(RECOMMENDED) 0.1 tf 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 IC, COLLECTOR CURRENT (NORMALIZED: IC/ICmax) t, TIME (NORMALIZED: TIME/t d(off)typ)
10 VCE = 600 V VGE = 15 V IC = ICmax 1.0 td(off)
0.1 tf TJ = 125C TJ = 25C 0.01 0 0.5 1.0 1.5 2.0 2.5 RG, GATE RESISTANCE (NORMALIZED: RG/RG(RECOMMENDED)) 1.0 3.0
Figure 5. Inductive Switching Times versus Collector Current 4
Figure 6. Inductive Switching Times versus Gate Resistance Motorola IGBT Device Data
MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
TYPICAL CHARACTERISTICS
(see also application information) 2.5 25C t, TIME (NORMALIZED: TIME/t r(typ) ) t, TIME (NORMALIZED: TIME/t r(typ)) td(on) 2.0 TJ = 125C 5.0 25C 4.0 TJ = 125C 3.0 TJ = 125C 2.0 1.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 0.5 IC, COLLECTOR CURRENT (NORMALIZED: IC/ICmax) 2.5 1.0 1.5 2.0 RG, GATE RESISTANCE (NORMALIZED: RG/RG(RECOMMENDED)) 3.0 td(on) tr 25C 6.0
1.5 TJ = 125C 1.0 tr 0.5 0 VCE = 600 V VGE = 15 V RG = RG(RECOMMENDED) 25C
Figure 7. Inductive Switching Times versus Collector Current
E on , TURN-ON AND E off , TURN-OFF ENERGY LOSSES (NORMALIZED: E/E off(typ) ) E on , TURN-ON AND E off , TURN-OFF ENERGY LOSSES (NORMALIZED: E/E off(typ) ) 2.5 Eon, TJ = 125C 2.0 Eon, TJ = 25C Eoff, TJ = 125C 3.0
Figure 8. Inductive Switching Times versus Gate Resistance
Eon, TJ = 125C 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 RG, GATE RESISTANCE (NORMALIZED: RG/RG(RECOMMENDED)) 3.0 VCE = 600 V VGE = 15 V IC = ICmax Eoff, TJ = 25C Eon, TJ = 25C
1.5
Eoff, TJ = 125C
Eoff, TJ = 25C
1.0 VCE = 600 V VGE = 15 V RG = RG(RECOMMENDED) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0.5 0
IC, COLLECTOR CURRENT (NORMALIZED: IC/ICmax)
Figure 9. Turn-On and Turn-Off Energy Losses versus Collector Current
C, CAPACITANCE (NORMALIZED TO I Cmax (pF/A)) 100 Irr , PEAK REVERSE RECOVERY CURRENT t rr, REVERSE RECOVERY TIME (NORMALIZED: t rr /t rr(typ), 10 * I rr /I rr(typ)) 1000
Figure 10. Turn-On and Turn-Off Energy Losses versus Gate Resistance
TJ = 125C 10 Irr 25C TJ = 125C trr 25C V = 600 V 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Cies 100 Coes
1.0
10
Cres 1.0 0 5.0 10 15 20 25 30 35 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1 IF, FORWARD CURRENT (NORMALIZED: IF/IFmax)
Figure 11. Reverse Recovery Characteristics -- Free-Wheeling Diode
Figure 12. Capacitance Variation
Motorola IGBT Device Data
5
MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
TYPICAL CHARACTERISTICS
(see also application information) 70 IC , COLLECTOR CURRENT (AMPS) 60 25N120 50 40 15N120 30 10N120 20 10 0 0 200 400 600 800 1000 1200 1400 1600 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) VGE = 15 V RG = RG(RECOMMENDED) TJ = 25C 1.0
DIODE 0.1 IGBT
0.01
0.001 0.01 0.1 1.0 10 t, TIME (ms) 100 1000 10,000
Figure 13. Reverse Biased Safe Operating Area (RBSOA)
Figure 14. Thermal Response
90% GATE DRIVE OUTPUT td(on) tr td(off) tf 90% IC 10% 3% 10%
VCE Eon 1.0 ms Eoff
Figure 15. Timing Definitions
+15 V +15 V MBRS130LT3 RG MBRS130LT3 RG(on) MC33153 MC33153
MBRS130LT3
MBRS130LT3
RG(off) MBRS130LT3
Figure 16. Common Gate Drive Circuit
Figure 17. Recommended Gate Drive Circuit
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Motorola IGBT Device Data
MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
APPLICATION INFORMATION
These modules are designed to be used as the power stage of a three-phase AC induction motor drive. They may be used for up to 460 VAC applications. Switching frequencies up to 15 kHz were considered in the design. Gate resistance recommendations have been listed. These choices were based on the common gate drive circuit shown in Figure 16. However, significant improvements in Eoff may be gained by either of two methods: use of a negative gate bias, or use of the gate drive shown in Figure 17. Separate turn-on and turn-off gate resistors give the best results; in this case, RG(off) should be chosen as small as possible while limiting current to prevent damage to the gate drive IC. Designers should also note that turn-on and turn- off delay times are measured from the rising and falling edges of the gate drive output, not the gate voltage waveform. Since all three modules use similar technology, most of the graphs showing typical performance have been normalized. Actual values are listed for each size in the table, "Electrical Characteristics." Data on the graphs reflect performance using the common gate drive circuit shown in Figure 16. The first three curves, showing DC characteristics, are normalized for ICmax. The devices all perform similarly at rated current. The curves extend to IC(pk), the maximum allowable instantaneous current. The next two graphs, turn-off and turn-on times versus IC, are also normalized for ICmax. In addition, the time scales are normalized. Turn-off times are normalized to td(off) at 25C at rated current with recommended RG, while turn-on times are normalized to tr at 25C at rated current with recommended RG . The graphs showing switching times as a function of RG are similarly normalized. RG has been normalized to the recommended value listed under "Electrical Characteristics." The time axes are normalized exactly as for the corresponding graphs showing variation with IC. Similar transformations have been made for the next two figures, showing Eon and Eoff. Energies have been normalized to Eoff at 25C at ICmax with the recommended RG. IC has been normalized to ICmax, and RG has been normalized to the recommended value. Reverse recovery characteristics are also normalized. IC has again been normalized to ICmax. Reverse recovery time trr has been normalized to trr at 25C at ICmax. Peak reverse recovery current Irrm has been normalized to Irrm at 25C at ICmax, then multiplied by 10. Capacitance has been normalized to device rated ICmax. Since all modules are rated for the same voltage, the voltage scale on Figure 11 does not need to be normalized. Typical transient thermal impedance is shown for a diode and for an IGBT. All diodes behave quite similarly, as do all IGBTs. The last two graphs, VGE versus QG and RBSOA, are not normalized. Many issues beyond the ratings must be considered in a system design. Dynamic characteristics can all be affected by external circuit parameters. For example, excessive bus inductance can dramatically increase voltage overshoot during switching, increasing the switching energy. The choice of gate drive IC can have quite a large effect on rise and fall times, corresponding to differences in switching energies. In many cases, this can be compensated by simply changing the gate resistor accordingly -- a gate driver with a lower drive capability requires a smaller gate resistor. Ultimately, the module must be tested in the final system to characterize its performance.
1
2
3
4
5
Q1
D1
Q3
D3
Q5
D5
Q2
D2
Q4
D4
Q6
D6
17 16
15 14
13 12
11
10
9
8
7
6
Figure 18. Schematic of Module, Showing Pin-Out
Motorola IGBT Device Data
7
MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
RECOMMENDED PCB LAYOUT MODULE SIDE VIEW OF BOARD (Typical Dimensions in mm)
107.75 16.0 15.24
PIN 1 1.65 5.8 45.75 32.0 11.0 16.0 KEEP-OUT ZONES (x4) 41.91
16.0 PLATED THRU-HOLES (x17)
3.81 11.43
OPTIONAL NON-PLATED THRU-HOLES (x2)
Figure 19. Package Footprint
NOTES: 1. Package is symmetrical. 2. Dimension of plated thru-holes indicates finished hole size after plating. 3. Non-plated thru-holes shown for optional access to heat sink mounting screws.
8
Motorola IGBT Device Data
MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
PACKAGE DIMENSIONS
A U F
4 PL 1 2 3 4 5
Q 4 PL Y 2 PL
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. LEAD LOCATION DIMENSIONS (ie: G, S, R, H, F...) ARE TO THE CENTER OF THE LEAD. MILLIMETERS DIM MIN MAX A --- 107.75 B --- 45.75 C 16.37 17.64 D 0.77 1.53 E 12.49 13.51 F 14.86 15.62 G 3.43 4.19 H 41.53 42.29 K 29.99 31.01 L 6.29 7.31 M 5.46 6.48 N 10.49 11.51 P 31.49 32.51 Q 2.00 2.60 R 20.57 21.33 S 15.62 16.38 U 92.49 93.51 V 104.17 105.44 W 37.49 38.51 X 15.37 16.64 Y 5.25 5.75 Z 11.05 11.81 INCHES MIN MAX --- 4.242 --- 1.801 0.644 0.694 0.030 0.060 0.492 0.532 0.585 0.615 0.135 0.165 1.635 1.665 1.181 1.221 0.248 0.288 0.215 0.255 0.413 0.453 1.240 1.280 0.079 0.103 0.810 0.840 0.615 0.645 3.641 3.681 4.101 4.151 1.476 1.516 0.605 0.655 0.207 0.227 0.435 0.465
B
PN R
17 16 15 14 13 12 11 10 98 76
H
S Z
STYLE 1: PIN 1. 2. 3. 4. 5. N U V W P PIN 6. 7. 8. 9. 10. E6 G6 E5 G5 E4
G
6 PL
5 PL
M
4 PL G4 E3 G3 E2 G2 PIN 16. E1 17. GI
D 17 PL
PIN 11. 12. 13. 14. 15.
K X C E L
V
W
CASE 464A-02 ISSUE B
Motorola IGBT Device Data
9
MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
PACKAGE DIMENSIONS
A U F
4 PL 1 2 3 4 5
Q 4 PL Y 2 PL
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. LEAD LOCATION DIMENSIONS (ie: G, S, R, H, F...) ARE TO THE CENTER OF THE LEAD. MILLIMETERS DIM MIN MAX A --- 107.75 B --- 45.75 C 16.37 17.64 D 0.77 1.53 E 12.49 13.51 F 14.86 15.62 G 3.43 4.19 H 41.53 42.29 K 19.81 20.60 L 6.29 7.31 M 5.46 6.48 N 10.49 11.51 P 31.49 32.51 Q 2.00 2.60 R 20.57 21.33 S 15.62 16.38 U 92.49 93.51 V 104.17 105.44 W 37.49 38.51 X 15.37 16.64 Y 5.25 5.75 Z 11.05 11.81 INCHES MIN MAX --- 4.242 --- 1.801 0.644 0.694 0.030 0.060 0.492 0.532 0.585 0.615 0.135 0.165 1.635 1.665 0.780 0.881 0.248 0.288 0.215 0.288 0.413 0.453 1.240 1.280 0.079 0.103 0.810 0.840 0.615 0.645 3.641 3.681 4.101 4.151 1.476 1.516 0.605 0.655 0.207 0.227 0.435 0.465
B
PN R
17 16 15 14 13 12 11 10 98 76
H
S
G Z
STYLE 1: PIN 1. 2. 3. 4. 5.
6 PL
5 PL
M
4 PL
D 17 PL
N U V W P
PIN 6. 7. 8. 9. 10.
E6 G6 E5 G5 E4
PIN 11. 12. 13. 14. 15.
G4 E3 G3 E2 G2
PIN 16. E1 17. GI
X
C
K E L
V
W
CASE 464B-03 ISSUE B
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MHPM6B10N120/D Motorola IGBT Device Data

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